212th ECS 2007
発表資料一覧
舘 喜一
Improvement of Interface Properties of W/La
2
O
3
/Si MOS Structure Using Al Capping Layer
足立 学
Control of Flat Band Voltage by Partial Incorporation of La
2
O
3
or Sc
2
O
3
into HfO
2
in Metal/HfO
2
/SiO
2
/Si MOS Capacitors